Coupled mechanical-oxidation modeling during silicon thermal oxidation process

Accurate Simulation of Mechanical Stresses in Silicon During Thermal Oxidation

The aim of this paper is to present viscoelastic models to accurately simulate mechanical stresses which result from volume expansion during thermal oxidation or temperature ramps in silicon technology. Comparisons are made with wafer curvature measurements and it is shown that mechanical stresses can explain the "anomalously" fast initial regime during dry oxidation, without involving any addi...

Thermal Oxidation of AlGaAs: Modeling and Process Control

A simple physical model is developed for the thermal oxidation process of AlGaAs using the continuity equation. The model is based on the principle of oxidant mass conservation. Theoretical calculations are compared with experimental data to a good agreement. The model is then applied to the study of VCSEL batch fabrication. Several control parameters are discussed including AlGaAs layer thickn...

Thermal Oxidation Mechanism of Silicon Carbide

High Aspect Ratio SiO2 Capillary Based On Silicon Etching and Thermal Oxidation Process for Optical Modulator

This paper presents the design and fabrication of an optical window for an optical modulator toward image sensing applications. An optical window consists of micrometer-order SiO2 capillaries (porous solid) that can modulate transmission light intensity by moving the liquid in and out of porous solid. A high optical transmittance of the optical window can be achieved due to refractive index mat...

Effect of Oxidation Temperature on the Oxidation Process of Silicon-Containing Steel

The oxidation behavior of silicon-containing steel was studied by applying segmented heating routes similar to the atmosphere and heating process in an industrial reheating furnace. The oxidation tests were carried out on a simultaneous thermal analyzer at heating temperatures of 1150 ̋C–1300 ̋C. The morphologies of Fe2SiO4 were observed by SEM, and the penetration depths of the Fe2SiO4 layer a...